Short Course (Sunday, June 23)
Fundamentals of Device and Circuit Technology for 5G and mm-wave Communications
Organizers: Keisuke Shinohara (Teledyne) and Veeresh Deshpande (Helmholtz-Zentrum Berlin)
5G cellular technology is expected to support high data-rate instantaneous communications (1 Gbps), low latency (1 ms), and massive connectivity, enabling unprecedented applications for mobile, health, autonomous vehicles, smart cities, smart homes, and the Internet-of-Things (IoT). The planned 5G spectrum allocation includes sub-6 GHz and millimeter-wave bands such as 26 GHz and 28 GHz. Even higher frequency bands such as 40 GHz, 60 GHz, and 71-86 GHz are under evaluation. Even higher frequency bands (>100 GHz) are targeted beyond 5G for wireless communication.
Advances in semiconductor material and device technologies have enabled multiple power amplifier architectures to cover these bands. As power efficiency becomes increasingly crucial in 5G and beyond 5G systems, RF front-end modules are expected feature various technologies based on Si-CMOS, SiGe, and III-N semiconductors. Additionally, III-V semiconductors are expected to play major role in beyond 5G systems. The short course will attempt to cover basics and the state of the art of millimeter-wave 5G and beyond 5G RF front-end technologies, and will present status of different device (CMOS, GaN, SiGe, III-Vs) and circuit technologies addressing the technical challenges required for future RF communication (5G and beyond) systems.
1:10pm-2:10pm Prof. Harish Krishnaswamy (Columbia University) “5G Millimeter-wave Technology: Device Requirements, Circuit Approaches and System Considerations”
2:10pm-3:10pm Prof. Ickhyun Song (Oklahoma State University) “Advanced SiGe HBT Technologies for 5G and Beyond”
3:10pm-3:30pm Short break
3:30pm-4:30pm Mr. Bror Peterson (Qorvo) “Power Amplifier Requirements for mmWave 5G Systems”
4:30pm-5:30pm Prof. Mark Rodwell (UCSB) “Beyond 5G: 100-340GHz Transistor, IC, and System Design”