Short Course (Sunday, June 23)
Fundamentals of 5G Device and Circuit Technology
Organizers: Keisuke Shinohara (Teledyne) and Veeresh Deshpande (Helmholtz-Zentrum Berlin)
5G cellular technology is expected to support high data-rate instantaneous communications (1 Gbps), low latency (1 ms), and massive connectivity, enabling unprecedented applications for mobile, health, autonomous vehicles, smart cities, smart homes, and the Internet-of-Things (IoT). The planned 5G spectrum allocation includes sub-6 GHz and millimeter-wave bands such as 26 GHz and 28 GHz. Even higher frequency bands such as 40 GHz, 60 GHz, and 71-86 GHz are under evaluation. Advances in semiconductor material and device technologies have enabled multiple power amplifier architectures to cover these bands. As power efficiency becomes increasingly crucial in 5G systems, particularly for handsets, RF front-end modules feature various technologies based on Si-CMOS, SiGe, and GaAs. Emerging technologies based on GaN and InP are also actively being considered for for 5G base stations and handset applications. The short course will attempt to cover basics and the state of the art of millimeter-wave 5G RF front-end technologies, and will present status of different device (CMOS, GaN, SiGe etc.) and circuit technologies addressing the technical challenges required for 5G systems.