Rump Sessions (Tuesday, June 26)
8:30 PM (Location: Corwin West)
Negative capacitance devices -- Viable for integration now, soon, or never?
Aaron Franklin (Duke)
Mathieu Luisier (ETH)
T.P. Ma (Yale)
Sayeef Salahuddin (UC-Berkeley)
Peide Ye (Purdue)
Zoran Krivokapic (Global Foundries)
In 2008, Salahuddin and Datta proposed to introduce a ferroelectric layer into the gate stack of planar transistors to reduce their subthreshold swing below 60 mV/dec at room temperature. Since then, negative capacitance (NC) FETs have undergone tremendous developments: the originally used polymer ferroelectrics have been replaced by materials more compatible with industrial integration (e.g., doped Hafnium dioxide), NC-FETs with gate lengths below 30 nm have been demonstrated, and ferroelectric switching has been shown to survive down to sub-2 nm layer thickness. These recent and significant advancements have led many to wonder whether the NC-FET technology has become mature enough to enter mass production and, if not, what prevents it from doing so. This rump session gathers experts from academia and industry to discuss and debate the future and viability of NC-FETs. Focus will be on logic devices, but other applications such as non-volatile memory and neuromorphic computing will also be considered.
8:30 PM (Location: Corwin East)
Ultrawide-bandgap semiconductors (Ga2O3, Diamond, AlN)...Do we need them beyond GaN/SiC?
Uttam Singisetti (Univ. of Buffalo)
Grace Xing (Cornell)
Umesh Mishra, ECE department, UCSB
Gregg Jessen, AFRL, Dayton, Ohio
Tim Grotjohn, MSU
Andrew Armstrong, Sandia National Laboratories
Recently, a number of new ultrawidebandgap (UWB) semiconductors (bandgap larger than that of GaN/SiC) have been explored for power switching and power amplifier applications. Initial device performance on these UWB semiconductors look promising. However, several challenges exist including growth maturity, thermal limits, cost, and reliability in these material system. At the same time, GaN/SiC widebandgap devices have made tremendous progress in power switching and/or power amplifier applications. This poses the question, can the UWB technology outperform GaN/SiC technology and be the ultimate replacement for Si power switching devices, or it is of purely academic interest. Our esteemed panel of experts would debate this question.